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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE18008
DESCRIPTION *With TO-220C package *High voltage ,high speed APPLICATIONS *Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING
PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 10 16 4 8 125 150 -65~150 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient VALUE 1.0 62.5 UNIT /W /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=2A; IB=0.2A TC=125 IC=4.5A; IB=0.9A TC=125 IC=2A; IB=0.2A IC=4.5A; IB=0.9A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IC=2A ; VCE=1V IC=10mA ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz IE=0 ; VCB=10V;f=1MHz 14 6 11 10 MIN 450 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2
MJE18008
TYP.
MAX
UNIT V
0.6 0.65 0.7 0.8 1.10 1.25 0.1 0.5 0.1 0.1 0.1 34
V V V V
ICES
Collector cut-off current
mA
mA mA
13 100
MHz pF
Switching times resistive load,Duty CycleC10%,Pulse Width=20s ton toff ton toff Turn-on time Turn-off time Turn-on time Turn-off time VCC=300V ,IC=2A IB1=0.2A; IB2=1.0A 0.3 2.5 0.18 2.5 s s s s
VCC=300V ,IC=4.5A IB1=0.9A; IB2=2.25A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE18008
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
3


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